High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique

Si Nanocrystal Arrays Created in SiO2 Matrix by High-Energy Ion Bombardment

In the next two decades, nanoscience and nanotechnologies will transfer into new products and processes. One emerging area where this challenge will be successfully met is the field of semiconductor nanocrystals (NCs) (see, for instance, Norris et al., 2008). The promises offered by dielectric layers with hosted semiconductor nanocrystals in applications include production of silicon-based ligh...

Graphene based nickel nanocrystal flash memory

Graphene based flash memory was demonstrated by using nickel nanocrystals as storage nodes. As-grown graphene films were characterized by transmission electron microscopy and Raman spectroscopy to show good film quality. On/off operation of the transistor memory was acquired by static pulse response measurement. The memory window of the device was found up to be 23.1 V by back gate sweep. This ...

Formation of nickel-based nanocrystal monolayers for nonvolatile memory applications

Nanoscopic surface modification by slow ion bombardment

We present systematic scanning tunneling microscopy (STM)/atomic-force microscopic (AFM) investigations on nanoscopic defect production at atomically clean surfaces of SiO2, Al2O3 and highly oriented pyrolytic graphite (HOPG) after bombardment by slow (impact energy ≤ 1.2 keV) singly and multiply charged ions under strict ultra-high vacuum (UHV) conditions. Combined STM and AFM studies show tha...

X-ray production by ion bombardment

2014 The available experimental and theoretical results on ion induced X-rays are briefly surveyed. From experimental data it may be concluded that the mechanism for inner shell excitation by heavy ion-atom collisions is different from that for proton-atom collisions. The latter are described successfully in Plane Wave Born Approximation (PWBA) and in classical Binary Encounter Approximation (B...